Point-contact tunneling spectroscopy in high-temperature superconductors
Description
Tunneling-spectroscopy measurements were made on high-temperature superconductors using the point-contact technique that has been used successfully to reproduce the phonon structure found in thin-film junctions on niobium. For Ba-xKxBiO3, ideal tunneling characteristics have been observed. Using a Au tip, the normalized conductance can be fit perfectly with a thermal smeared BCS density of states. Using a superconducting Nb tip, the zero-bias conductance is approximately 0.2% of its values at high bias, and sharp structures are clearly defined at the sum and difference gaps. These results demonstrates that there is a well-defined energy gap in Ba1-xKxBiO3. Eliashberg functions were obtained for two materials by the modified McMillan-Rowell analysis. They bear a striking resemblance to the phonon density of states generated from the neutron scattering. For both materials, there is a good agreement between the calculated and the experimental values of Tc. Results represent the first demonstration that point-contact tunneling can provide the same degree of sensitivity as thin-film tunneling spectroscopy
Availability note (English)
University Microfilms, PO Box 1764, Ann Arbor, MI 48106, Order No.92-06,429.Additional details
Publishing Information
- Publisher
- Illinois Inst. of Tech.
- Imprint Place
- Chicago, IL (United States)
- Imprint Pagination
- 123 p.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24026079
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Thesis, Non-conventional Literature
- Descriptors DEI
- BISMUTH OXIDES; COPPER OXIDES; GORKOV-ELIASHBERG THEORY; HIGH-TC SUPERCONDUCTORS; SPECTROSCOPY; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS