Published March 1973
| Version v1
Journal article
Parameters and energy resolution of the KP303 field-effect transistors at low temperatures
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Parametry i ehnergeticheskoe razreshenie polevykh tranzistorov KP303 pri nizkikh temperaturakh
- Augmented title (English)
- Transconductance, gate current
Publishing Information
- Journal Title
- Prib. Tekh. Ehksp.
- Journal Issue
- no.2
- Series
- Prib. Tekh. Ehksp.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 4077194
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DIAGRAMS; ENERGY RESOLUTION; FIELD EFFECT TRANSISTORS; LOW TEMPERATURE; MEDIUM TEMPERATURE; PERFORMANCE; TEMPERATURE DEPENDENCE; TESTING
- Descriptors DEC
- RESOLUTION; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- For English translation see the journal Instrum. Exp. Tech.