Chemically deposited nanocrystalline lead sulfide thin films with tunable properties for use in photovoltaics
Creators
- 1. Department of Mechanical and Aerospace Engineering, University of Virginia, 122 Engineer's Way, P.O. Box 400746, Charlottesville, VA 22904 (United States)
- 2. Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, PO Box 400743, Charlottesville, VA 22904 (United States)
Description
A refurbished chemical bath deposition technique was developed for growing thin film semiconducting nanocrystalline lead sulphide (PbS) for use in photovoltaics. The goal of this work was to produce good quality crystals, with the high mobility of holes and electrons required for effective carrier separation in photovoltaic applications, and to control other electro-physical properties. Tightly attached, densely compacted, nanocrystalline PbS films with tunable electrical, physical, and optical properties were deposited. Adherence to the substrate was attained by establishing firmly attached kernels on the substrate from which crystallization occurred. Nanocrystalline structures were precipitated unto the substrate by controlling the deposition temperatures, time, concentration of the chemical constituents and ionic products. Using this approach nanocrystalline thin film PbS layers with controllable thicknesses were proliferated. SEM images show rigid crystalline structure, and low impurity concentrations in the film. Hall Effect and spectroscopy measurements illustrate tunable electrical, physical, and optical properties. Carrier concentrations were achieved between 6 × 1016 /cm3−8 × 1018/cm3 and mobility ranged between 3.4 cm2/Vs–33 cm2/Vs. Photoconductivity was measured using 980 nm laser and blackbody at temperature of 450 °C and 800 °C. Results indicate low recombination rates on the surface. Prolonged exposure to air confirms resistance to oxidation, and stability of the optical and electro-physical parameters
Availability note (English)
Available from http://dx.doi.org/10.1016/j.electacta.2014.11.021Additional details
Identifiers
- DOI
- 10.1016/j.electacta.2014.11.021;
- PII
- S0013-4686(14)02198-7;
Publishing Information
- Journal Title
- Electrochimica Acta
- Journal Volume
- 151
- Journal Page Range
- p. 140-149
- ISSN
- 0013-4686
- CODEN
- ELCAAV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47002745
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; CRYSTAL GROWTH; CRYSTALS; HALL EFFECT; HOLES; LEAD SULFIDES; NANOSTRUCTURES; OPTICAL PROPERTIES; OXIDATION; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECT; PRECIPITATION; RECOMBINATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SUBSTRATES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; CHEMICAL REACTIONS; DEPOSITION; DIMENSIONLESS NUMBERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; FILMS; LEAD COMPOUNDS; MATERIALS; MICROSCOPY; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; SEPARATION PROCESSES; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.