Published May 1994 | Version v1
Journal article Metadata-only

Doped thermooxidation of gallium arsenide with participation of ammonium metavanadate

Creators

  • 1. Voronezhskij Gosudarstvennyj Univ., Voronezh (Russian Federation)

Description

Kinetics and mechanism of GaAs thermal oxidation process are studied under ammonium vanadate action. It is shown, that NH4VO3 introduction into gaseous phase accelerates formation of oxide films: at t ≥ 500 deg C 4 times in thickness and 8 times in time: at t < 500 deg 1.6 and 2.6 times respectively

Additional details

Additional titles

Original title (Russian)
Примесное термооксидирование арсенида галлия с участием метаванадата аммония

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
30
Journal Issue
5
Journal Page Range
p. 603-607.
ISSN
0002-337X
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
26019544
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Descriptors DEI
AMMONIUM COMPOUNDS; AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTION KINETICS; CONCENTRATION RATIO; FILMS; GALLIUM ARSENIDES; IMPURITIES; OXIDATION; OXYGEN; TEMPERATURE RANGE 0400-1000 K; VANADATES; WATER VAPOR
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL REACTIONS; ELECTRON SPECTROSCOPY; ELEMENTS; FLUIDS; GALLIUM COMPOUNDS; GASES; KINETICS; NONMETALS; OXYGEN COMPOUNDS; PNICTIDES; REACTION KINETICS; SPECTROSCOPY; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS; VAPORS