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Published August 2020 | Version v1
Journal article

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application

  • 1. Jiangsu University of Technology. School of Mathematics and Physics (China)
  • 2. Chinese Academy of Sciences. Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors (China)
  • 3. Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences. State Key Laboratory of Functional Materials for Informatics (China)
  • 4. Sun Yat-Sen University. State-Key Laboratory of Optoelectronic Materials and Technology, School of Physics (China)

Description

In this paper, the Mg35Sb65/Sn15Sb85 superlattice-like films were prepared by magnetron sputtering and the comprehensive properties of were systematically studied. The amorphous-to-crystalline transformation was researched with a situ resistance–temperature measurement system to evaluate the thermal stability. X-ray diffraction, Raman and transmission electron microscopy were employed to explore the change of phase structure at different annealing temperatures. The reversible resistance switching was achieved for [MgSb(7 nm)/SnSb(3 nm)]5-based devices. The results showed that Mg35Sb65/Sn15Sb85 superlattice-like film was a promising phase change material with good thermal stability, fast phase transition and low power consumption.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Materials Science. Materials in Electronics
Journal Volume
31
Journal Issue
15
Journal Page Range
p. 12476-12481
ISSN
0957-4522
CODEN
JSMEEV

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Copyright (c) 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020