Published 1989 | Version v1
Journal article Metadata-only

Photothermal ionization spectroscopy

Creators

  • 1. Lund Univ. (Sweden)

Description

The paper outlines briefly recent developments in deep level characterization by emphasizing the unique properties of photo thermal ionization spectroscopy (PTIS). PTIS is a temperature dependent method which together with the high sensitivity can provide information difficult to obtain in absorption measurements. Several examples are discussed to illuminate these properties of PTIS and recent results obtained for transition metals in silicon are presented. (author) 40 refs., 19 figs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
341-353
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20062072
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; ION SPECTROSCOPY; PHONONS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE; TRANSITION ELEMENTS; ZEEMAN EFFECT
Descriptors DEC
CRYSTAL STRUCTURE; ELEMENTS; MAGNETIC RESONANCE; MATERIALS; METALS; QUASI PARTICLES; RESONANCE; SEMIMETALS; SPECTROSCOPY