Influence of Al doping on structural and optical properties of Mg–Al co-doped ZnO thin films prepared by sol–gel method
- 1. School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)
- 2. Center for Analysis and Tests, Tianjin University, Tianjin 300072 (China)
- 3. Faculty of Engineering, University of Wollongong, Northfields Avenue, Wollongong, NSW 2522 (Australia)
Description
Highlights: • Mg–Al co-doped ZnO thin films were prepared by sol–gel spin coating method. • The effects of Al doping on structural and optical properties of AMZO thin films were investigated. • The EDS spectra confirmed presence of Mg and Al elements in AMZO thin films. • The optical band gap of AMZO thin films increased with Al doping concentration increased. • The origin of the photoluminescence emissions was discussed. -- Abstract: Mg–Al co-doped ZnO (AMZO) thin films were successfully deposited onto quartz glass substrates by sol–gel spin coating method. The structure, surface morphology, composition, optical transmittance, and photoluminescence properties of AMZO thin films were characterized through X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy, UV–VIS–NIR spectrophotometry, and fluorescence spectrophotometry. The results indicated that AMZO thin films exhibited preferred orientation growth along the c-axis, and the full width at half maximum of the (0 0 2) diffraction peak decreased first and subsequently increased, reaching a minimum of approximately 0.275° at 3% Al content. The calculated crystallite size increased from 30.21 nm to 40.73 nm. Al doping content increased from 1% to 3% and subsequently reached 19.33 nm for Al doping content at 5%. The change in lattice parameters was demonstrated by the c/a ratio, residual stress, bond length, and volume per unit cell. EDS analysis confirmed the presence of Mg and Al elements in ZnO thin films. The atomic percentage of Mg and Al elements was nearly equal to their nominal stoichiometry within the experimental error. In addition, the optical transmittance of AMZO thin films was over 85% in the visible region, and the optical band gap increased with increasing Al doping concentration. Room temperature photoluminescence showed ultraviolet emission peak and defect emission peak. The defect emission peak of AMZO thin films blue-shifted from 612 nm to 586 nm, with Al doping content increasing from 1% to 5%
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jallcom.2013.11.061Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2013.11.061;
- PII
- S0925-8388(13)02791-6;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 589
- Journal Page Range
- p. 346-352
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45054387
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEPOSITS; FLUORESCENCE; GRAIN ORIENTATION; LATTICE PARAMETERS; OPTICAL PROPERTIES; PEAKS; PHOTOLUMINESCENCE; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SPECTROPHOTOMETRY; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; EMISSION; FILMS; LUMINESCENCE; MICROSCOPY; MICROSTRUCTURE; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; SCATTERING; SPECTROSCOPY; STRESSES; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.