Published December 15, 2009
| Version v1
Journal article
Influence of defects on charge and energy transfer in layered crystals
Creators
- 1. Institute of Physics of Azerbaijan NAS, AZ-1143, Baku, H.Javid ave., 33 (Azerbaijan)
Description
It is shown that plane defects, which is due to the stacking faults in layered crystals influence substantially charge and energy transfer mechanism in the direction perpendicular to the layers. Dominant mechanism of charge transfer in the direction perpendicular to the layers in different graphite's at low temperatures (T<300 K) is the variable range hopping conductivity.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2009.08.259Additional details
Identifiers
- DOI
- 10.1016/j.physb.2009.08.259;
- PII
- S0921-4526(09)01049-7;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 404
- Journal Issue
- 23-24
- Journal Page Range
- p. 5215-5217
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 25. international conference on defects in semiconductors
- Dates
- 20-24 Jul 2009
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41089777
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANISOTROPY; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ENERGY TRANSFER; GRAPHITE; LAYERS; STACKING FAULTS
- Descriptors DEC
- CARBON; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; MINERALS; NONMETALS; PHYSICAL PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.