Published February 2010 | Version v1
Journal article

Electronic properties of quantum dot systems realized in semiconductor nanowires

  • 1. Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario, M5S 3E4 (Canada)
  • 2. NEST-CNR-INFM and Scuola Normale Superiore di Pisa, Pisa (Italy)

Description

Catalyst-assisted growth of semiconductor nanowires has opened up several new and exciting possibilities for low-dimensional semiconductor structures. The authors review progress on the realization of quantum dots in semiconductor nanowires, and their characterization by transport spectroscopy. Emphasis is placed on the wide range electronic properties exhibited due to flexibility of the growth process in terms of nanostructure composition and size. Particular attention is placed on studies of spin in few-electron quantum dots. (topical review)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/25/2/024007

Additional details

Identifiers

DOI
10.1088/0268-1242/25/2/024007;
PII
S0268-1242(10)24619-9;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
25
Journal Issue
2
Journal Page Range
[12 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45010888
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CATALYSTS; FLEXIBILITY; QUANTUM DOTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SPECTROSCOPY
Descriptors DEC
MATERIALS; MECHANICAL PROPERTIES; NANOSTRUCTURES; TENSILE PROPERTIES