Published February 2010
| Version v1
Journal article
Electronic properties of quantum dot systems realized in semiconductor nanowires
Creators
- 1. Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario, M5S 3E4 (Canada)
- 2. NEST-CNR-INFM and Scuola Normale Superiore di Pisa, Pisa (Italy)
Description
Catalyst-assisted growth of semiconductor nanowires has opened up several new and exciting possibilities for low-dimensional semiconductor structures. The authors review progress on the realization of quantum dots in semiconductor nanowires, and their characterization by transport spectroscopy. Emphasis is placed on the wide range electronic properties exhibited due to flexibility of the growth process in terms of nanostructure composition and size. Particular attention is placed on studies of spin in few-electron quantum dots. (topical review)
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/25/2/024007Additional details
Identifiers
- DOI
- 10.1088/0268-1242/25/2/024007;
- PII
- S0268-1242(10)24619-9;
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 25
- Journal Issue
- 2
- Journal Page Range
- [12 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45010888
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CATALYSTS; FLEXIBILITY; QUANTUM DOTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SPECTROSCOPY
- Descriptors DEC
- MATERIALS; MECHANICAL PROPERTIES; NANOSTRUCTURES; TENSILE PROPERTIES