Published 1993 | Version v1
Book Metadata-only

Annealing of irradiation damage in epitaxial InP homojunction solar cells

Creators

  • 1. Univ. of Newcastle, Newcastle upon Tyne (United Kingdom). Newcastle Photovoltaics Applications Centre
  • 2. Univ. of Wales, Cardiff (United Kingdom). School of Electrical, Electronic and Systems Engineering
  • 3. EEV Ltd., Chelmsford (United Kingdom)

Description

Changes in the performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterize the irradiation induced defects. Admittance spectroscopy has identified a defect, HD 1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterization to thermal annealing of the cells, both at room and elevated temperature, is considered

Part of:
Twenty third IEEE photovoltaic specialists conference

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (United States)
ISBN
0-7803-1220-1
Imprint Title
Twenty third IEEE photovoltaic specialists conference
Imprint Pagination
1566 p.
Journal Page Range
p. 1442-1447.

Conference

Title
23. Institute of Electrical and Electronic Engineers (IEEE) photovoltaic specialists conference.
Dates
10-14 May 1993.
Place
Louisville, KY (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
25039450
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DYNAMITRONS; INDIUM PHOSPHIDE SOLAR CELLS; IRRADIATION PROCEDURES; PERFORMANCE; PHYSICAL RADIATION EFFECTS; SPACECRAFT POWER SUPPLIES
Descriptors DEC
ACCELERATORS; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; ELECTROSTATIC ACCELERATORS; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; POWER SUPPLIES; RADIATION EFFECTS; SOLAR CELLS; SOLAR EQUIPMENT

Optional Information

Secondary number(s)
CONF-930540--.