Effect of temperature on electronic and electrical behavior of InGaN double hetero-junction p-i-n solar cells

Optoelectronic systems based on elements of the nitride family, mainly, those based on GaN/InGaN alloys offer huge potentialities in solar cell applications, as example in concentrated photovoltaic (CPV) for the realization of solar photovoltaic cells (SPC), mainly thanks to the large tunability of the band-gap related to the ternary In-Ga-N concentrations in the layers. This paper investigates temperature effects on the electronic and electrical parameters, and thus efficiency of GaN/InGaN SPCs with respect to the N-face configuration. In an attempt to determine the energy bands all along with the cell's photovoltaic parameters, a numerical model is proposed. The model considers the indium composition and the host lattice temperature. Moreover, the developed model highlights the polarization effects on the performances of nitride SPCs.