Published January 2016 | Version v1
Journal article

On reactive high power impulse magnetron sputtering

  • 1. Department of Space and Plasma Physics, School of Electrical Engineering, KTH Royal Institute of Technology, SE-100 44, Stockholm (Sweden)
  • 2. Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland)

Description

High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition (IPVD) technique that is particularly promising for reactive sputtering applications. However, there are few issues that have to be resolved before the full potential of this technique can be realized. Here we give an overview of the key experimental findings for the reactive HiPIMS discharge. An increase in the discharge current is commonly observed with increased partial pressure of the reactive gas or decreased repetition pulse frequency. There are somewhat conflicting claims regarding the hysteresis effect in the reactive HiPIMS discharge as some report reduction or elimination of the hysteresis effect while others claim a feedback control is essential. The ion energy distribution of the metal ion and the atomic ion of the reactive gas are similar and extend to very high energies while the ion energy distribution of the working gas and the molecular ion of the reactive gas are similar and are much less energetic. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0741-3335/58/1/014002

Additional details

Publishing Information

Journal Title
Plasma Physics and Controlled Fusion
Journal Volume
58
Journal Issue
1
Journal Page Range
[8 p.]
ISSN
0741-3335
CODEN
PPCFET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47113506
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ATOMIC IONS; ENERGY SPECTRA; HYSTERESIS; MAGNETRONS; MOLECULAR IONS; PARTIAL PRESSURE; PHYSICAL VAPOR DEPOSITION; SPUTTERING
Descriptors DEC
CHARGED PARTICLES; DEPOSITION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; IONS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; PHYSICAL PROPERTIES; SPECTRA; SURFACE COATING; THERMODYNAMIC PROPERTIES