Published December 23, 2013
| Version v1
Journal article
Optical and structural characterization of nitrogen-rich InN: Transition from nearly intrinsic to strongly n-type degenerate with temperature
Creators
- 1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)
- 2. Department of Physics, McGill University, 3600 University Street, Montreal, Quebec H3A 2T8 (Canada)
- 3. Meaglow Ltd., 1308 Piccard Avenue, Thunder Bay, P7G 1A7 Ontario (Canada)
Description
We report on a detailed study of the structural and optical properties of nonstoichiometric nitrogen-rich InN grown on sapphire substrates, by migration enhanced afterglow deposition. The samples were polycrystalline, with the presence of InN dots. Unusually strong photoluminescence emission was measured at cryogenic temperatures, with the peak energy at ∼0.68 eV. Detailed analysis further shows that the sample has very low residual electron density in the range of ∼1016 cm−3 at temperatures below 20 K
Additional details
Identifiers
- DOI
- 10.1063/1.4857535;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 103
- Journal Issue
- 26
- Journal Page Range
- p. 262101-262101.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45074451
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AFTERGLOW; DEPOSITION; ELECTRON DENSITY; INDIUM NITRIDES; NITROGEN; OPTICAL PROPERTIES; PEAKS; PHOTOLUMINESCENCE; POLYCRYSTALS; SAPPHIRE; SUBSTRATES
- Descriptors DEC
- CORUNDUM; CRYSTALS; ELEMENTS; EMISSION; INDIUM COMPOUNDS; LUMINESCENCE; MINERALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXIDE MINERALS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC