Surface half-metallicity and interfacial mixing of (Cr, Mn, Fe)VAs/GaAs(001)
- 1. Institute for Basic Science, Department of Physics, Chungbuk National University, Cheongju, 361-763 (Korea, Republic of)
Description
We have investigated the magnetic and electronic properties of surface and interface for a mixed M(Ga,As) alloys with 1-2 monolayers (MLs) M(M = V, Cr, Mn, and Fe) on the GaAs(001) substrate by using first-principle calculations. We found that the surface and bulk V of zinc-blende VAs(001) half-metallic states result in different lattice parameters. The surface V (or Cr) for the M-terminated zinc-blende M/As/M/GaAs(001) of 2-ML M shows a half-metallic character, while the gap in the minority-spin state of V (or Cr) in the third layer from the surface is destroyed. However, the hypothetical zinc-blende As/M/(GaM)/AsGa(001) with the surface diffusion of As atoms is found to be energetically favorable structure in the case of 2-ML M. The magnetism of V, Cr, or Mn for the 2-ML M system has the antiferromagnetic order, while for Fe it has the ferromagnetic order
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.04.038;
- PII
- S0040-6090(05)00402-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 488
- Journal Issue
- 1-2
- Journal Page Range
- p. 204-210
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37019780
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIFERROMAGNETISM; ARSENIC ALLOYS; CHROMIUM; DIFFUSION; GALLIUM ALLOYS; GALLIUM ARSENIDES; INTERFACES; IRON; LATTICE PARAMETERS; LAYERS; MANGANESE; MIXING; SURFACES; VANADIUM; ZINC SULFIDES
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; ELEMENTS; GALLIUM COMPOUNDS; INORGANIC PHOSPHORS; MAGNETISM; METALS; PHOSPHORS; PNICTIDES; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENTS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.