Published January 15, 1998 | Version v1
Journal article

Radiation effects in low-thrust orbit transfers

  • 1. Aerospace Corporation, P.O. Box 92957, M5-754, Los Angeles, California 90009 (United States)

Description

A low-thrust orbit transfer vehicle (OTV) and its payload must be designed to survive in the near-Earth radiation environment for a much longer duration than a conventional upper stage. This paper examines the effects of natural radiation on OTV's using data that have become available since 1991 from the CRRES and APEX satellites. Dose rates for microelectronics in LEO-to-GEO missions are calculated for spiral orbit raising and for multi-impulse transfers. Semiconductor devices that are shielded by less than 2.5 mm of aluminum (0.69 g/cm2) are inappropriate for spiral transfers, because they require hardness levels >100 krad (Si). Shield thicknesses of 6-12 mm reduce this requirement to about 10 krad (Si), which is still an order of magnitude higher than the radiation dose in a 10-year mission at GEO with similar shielding. The dose for a multi-impulse LEO-to-GEO transfer is about 10 times smaller than for a spiral transfer. Estimates of single event upset rates and photovoltaic array degradation are also provided

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
420
Journal Issue
1
Journal Page Range
p. 264-269
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
Space technology and applications international forum - 1998
Acronym
STAIF-1998
Dates
25-29 Jan 1998
Place
Albuquerque, NM (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40053885
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM; CONTROL; DOSE RATES; ELECTRONS; MICROELECTRONICS; ORBITS; PHOTOVOLTAIC EFFECT; PROTON DOSIMETRY; RADIATION BELTS; RADIATION DOSES; RADIATION HARDENING; SATELLITES; SEMICONDUCTOR DEVICES; SHIELDING
Descriptors DEC
DOSES; DOSIMETRY; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HARDENING; LEPTONS; METALS; PHOTOELECTRIC EFFECT; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS

Optional Information

Notes
(c) 1998 American Institute of Physics.