Published 1980
| Version v1
Journal article
Displacement of B atoms by low temperature irradiation of Si-0.2% B crystals
- 1. Atomic Energy of Canada Ltd., Chalk River, Ontario. Chalk River Nuclear Labs.
- 2. FOM-Instituut voor Atoom-en Molecuulfysica, Amsterdam (Netherlands)
Description
The irradiation-induced displacement of B atoms from lattice sites in Si-0.2% B crystals has been measured by ion channeling. The results indicate that the displacement caused by 35 K irradiation with 0.7 MeV H+ is due to trapping of Si interstitials by B atoms, while the displacement caused by subsequent annealing between 200 and 300 K is due to migration of B interstitials and/or B-vacancy pairs. (author)
Additional details
Publishing Information
- Journal Title
- Radiat. Eff. Lett.
- Journal Volume
- 50
- Journal Issue
- 3-6
- Series
- Radiat. Eff. Lett.
- Journal Page Range
- 139-146
- ISSN
- 0142-2448
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 11567036
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BORON ADDITIONS; DIFFUSION; HYDROGEN IONS; INTERSTITIALS; ION CHANNELING; KEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; SILICON; TRAPPING; VACANCIES
- Descriptors DEC
- CHANNELING; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS