Analysis of gamma-radiation induced instability mechanisms in CMOS transistors

Gamma-radiation induced instabilities of threshold voltage and gain factor of Al-gate and Si-gate CMOS transistors, as well as the underlying changes in positive gate oxide charge and interface trap densities are presented. The data are analyzed in terms of physico-chemical and electrophysical processes responsible for creation of the gate oxide charge and interface traps, and a generalized model which explains in detail the experimental data obtained is proposed. (author)