Published 1990 | Version v1
Book Metadata-only

Heteroepitaxial growth of InP on GaAs with interface layer grown by flow-rate modulation epitaxy

Creators

  • 1. Center for Electronic and Electrooptic Materials, State Univ. of New York at Buffalo, Amherst, NY (USA)

Description

The authors have grown and characterized heteroepitaxial films of InP on GaAs. They demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, they can improve the quality of heteroepitaxy films. The full-widths-at-half-maximum of the x-ray rocking curve and the 10-K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-048-8
Imprint Title
Layered structures
Imprint Pagination
823 p.
Journal Page Range
p. 401-404.

Conference

Title
Materials Research Society fall meeting.
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22015627
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL GROWTH; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; INTERFACES; PHOTOLUMINESCENCE; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; EMISSION; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; SCATTERING; SEMICONDUCTOR JUNCTIONS

Optional Information

Secondary number(s)
CONF-891119--.