Reduced defect density in microcrystalline silicon by hydrogen plasma treatment

The effect of hydrogen plasma treatment (HPT) during the initial stage of microcrystalline silicon (μc-Si) growth on the defect density of μc-Si has been investigated. Lower absorption coefficient in the 0.8–1.0 eV indicated less defect density compared to its counterpart without HPT. The infrared spectroscopy of μc-Si with HPT shows an increase in 2040 cm⁻¹, which reveals more Si—H in the amorphous/crystalline interfaces. We ascribe the decrease of defect density to hydrogen passivation of the dangling bonds. Improved performance of μc-Si solar cell with HPT is due to the reduced defect density. (semiconductor materials)