Published 1985
| Version v1
Journal article
Effect of the damage induced by neon ion implantation in InP
Creators
- 1. Waseda Univ., Tokyo (Japan). School of Science and Engineering
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Hosei Daigaku Ion Bimu Kagaku Kenkyusho Hokoku
- Journal Issue
- suppl.4
- Series
- Hosei Daigaku Ion Bimu Kagaku Kenkyusho Hokoku.
- ISSN
- 0286-0201
- CODEN
- HDIHD
Conference
- Title
- 3. symposium on ion beam technology, Hosei University. Ion beam analysis.
- Dates
- 7-8 Dec 1984.
- Place
- Koganei, Tokyo (Japan).
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 17018023
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; BACKSCATTERING; BORON IONS; CHARGE CARRIERS; CRYSTALS; DOPED MATERIALS; INDIUM PHOSPHIDES; ION IMPLANTATION; MOBILITY; NEON IONS; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING; SEMICONDUCTOR MATERIALS; SUBSTRATES
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELASTIC SCATTERING; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATION EFFECTS; SCATTERING
Optional Information
- Notes
- Published in summary form only.