Detection of organic contamination on silicon substrates: Comparison of several techniques

Organic contamination adsorbed on 200 mm silicon wafers was characterized using various analytical techniques. Surface hydrophobicity, apparent optical thickness and electrical surface charge are used to characterize the silicon surface state. They only give information on total organic contamination. MIR-FTIR is very sensitive for detecting CH2 and CH3 contained in organics on silicon wafers. TOF-SIMS is quite sensitive and enables some of the organics to be recognized by identifying the molecule fragments. TDGC-MS is the most relevant technique to identify organic contamination on silicon wafers as extensive identification libraries exist