Published 1983 | Version v1
Book Metadata-only

Cross-sectional transmission electron microscopy of semiconductors

Creators

  • 1. Dept. of Materials Science and Mineral Eng., Lawrence Berkeley Lab. Univ. of California, Berkeley, CA 94720

Description

This chapter describes a method to prepare cross-sectional (X) semiconductor specimens for transmission electron microscopy (TEM). Demonstrates the power and utility of cross-sectional TEM (XTEM). Discusses the preparation technique for crosssection specimens, and structural defects profiles from XTEM and other techniques (e.g., TEM/SIMS). Shows that accuracy and interpretation of indirect structural-defects profiling techniques, namely, MeV He+ channeling and secondary ion mass spectrometry (SIMS) can be greatly enhanced by comparing their results with those obtained by XTEM from the same set of samples

Additional details

Publishing Information

Publisher
Plenum Publishing Corp.
Imprint Place
New York, NY (USA)
Imprint Title
Advances in materials characterization
Journal Page Range
p. 359-365.

Conference

Title
18. ceramic science conference on advances in materials characterization.
Dates
16-18 Aug 1982.
Place
Alfred, NY (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
15066961
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CROSS SECTIONS; CRYSTAL DEFECTS; HELIUM IONS; ION CHANNELING; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MEV RANGE; SAMPLE PREPARATION; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCO
Descriptors DEC
CHANNELING; CHARGED PARTICLES; CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ENERGY RANGE; IONS; MATERIALS; MICROANALYSIS; MICROSCOPY; NONDESTRUCTIVE ANALYSIS; SPECTROSCOPY