Terahertz generation using plasmonic photoconductive gratings
Creators
- 1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 1301 Beal Ave, Ann Arbor, MI 48109 (United States)
Description
A photoconductive terahertz emitter based on plasmonic contact electrode gratings is presented and experimentally demonstrated. The nanoscale grating enables ultrafast and high quantum efficiency operation simultaneously, by reducing the photo-generated carrier transport path to the photoconductor contact electrodes. The presented photoconductor eliminates the need for a short-carrier lifetime semiconductor, which limits the efficiency of conventional photoconductive terahertz emitters. Additionally, the photo-absorbing active area of the plasmonic photoconductive terahertz emitter can be increased without a significant increase in the capacitive loading to the terahertz radiating antenna, enabling high quantum-efficiency operation at high pump power levels by preventing the carrier screening effect and thermal breakdown. A plasmonic photoconductive terahertz emitter prototype based on the presented scheme is implemented and integrated with dipole antenna arrays on a semi-insulating In0.53Ga0.47As substrate. Emitted terahertz radiation is characterized in a terahertz time-domain spectroscopy setup, measuring a terahertz pulse width of 590 fs full-width at half maximum in response to 150 fs pump pulses at 925 nm. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/14/10/105029Additional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 14
- Journal Issue
- 10
- Journal Page Range
- [12 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44046630
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTENNAS; ARSENIC COMPOUNDS; BREAKDOWN; CARRIER LIFETIME; CARRIERS; DIPOLES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LOADING; NANOSTRUCTURES; OPERATION; PHOTOCONDUCTIVITY; PULSES; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SUBSTRATES; THZ RANGE
- Descriptors DEC
- EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; FREQUENCY RANGE; LIFETIME; MATERIALS; MATERIALS HANDLING; MULTIPOLES; PHYSICAL PROPERTIES