Solid phase electronic annealing of ion-implanted crystalline zinc selenide

Laser annealing is technologically simple, but it has been found ineffective for ZnTe and CdSe. This is because, at present, for most of the wide-bandgap AIIBVI compounds it is difficult to obtain powerful lasers with the requisite spectrum. Pulsed electron annealing provides the possibility of varying the thickness of the annealed layer over wide limits and of controlling accurately. The technological possibilities for pulsed electron annealing of ZnSe have been studied. It was shown that pulsed electron annealing in AIIBVI compounds has a number of specific properties which must be kept in mind in its use. In the present work, the authors consider these properties and carry out a generalization of the results obtained previously. 15 refs., 4 figs