Published October 1978 | Version v1
Journal article

On the production of paramagnetic defects in silicon by electron irradiation

  • 1. Amsterdam Univ. (Netherlands). Natuurkundig Lab.

Description

Monocrystalline silicon samples of different impurity contents have been irradiated with 1.5 MeV electrons in order to produce divacancies in their negative charge state. In these samples different combinations of defects have been observed with electron paramagnetic resonance. The conditions for production and observation of these defects are compared. For two new EPR spectra, labelled (Si-) NL11 and (Si-) NL12, the spin Hamiltonian parameters are reported. For NL11, which arises from an S = 1 spin state, the obvious identification with the neutral charge state of the divacancy can not be confirmed. (author)

Additional details

Publishing Information

Journal Title
Solid State Commun.
Journal Volume
28
Journal Issue
2
Series
Solid State Commun.
Journal Page Range
221-225
ISSN
0038-1098