High temperature radiation responses of amorphous SiOC/crystalline Fe nanocomposite
- 1. Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States)
- 2. Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843-3128 (United States)
- 3. Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0298 (United States)
- 4. Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States)
Description
The radiation tolerance of amorphous silicon oxycarbide (SiOC) and crystalline Fe nanocomposites were examined by ion irradiation and transmission electron microscopy characterization. A comparison was made between a pure Fe film and SiOC/Fe multilayers. The composites were subjected to 120 keV He+ ions to average damage levels from approximately 0.5 to 10.7 displacements per atom (dpa) at 600 °C. Compared to pure Fe films, the swelling resistance in the Fe layers of thick SiOC/Fe (80/60 nm) multilayer films is improved by 2.2 times and the averaged void size is reduced to half. In some instances, a crystalline FexSiyOz reaction layer formed between the Fe and SiOC components of the composite, and the interface between Fe and FexSiyOz was observed to be incoherent. Void denuded zones were observed in the Fe layer close to the SiOC/Fe and Fe/FexSiyOz interfaces. For thin SiOC/Fe (14/14 nm) multilayers, layer breakdown was observed and the extent of the layer breakdown became more significant with increasing dpa values. However, there were no voids in the Fe component of the thin SiOC/Fe nanocomposites. These results suggest that the SiOC/Fe and Fe/FexSiyOz interfaces act as efficient defect sinks which promote point defect recombination and suppress void swelling. - Graphical abstract: Typical cross-sectional TEM images from (a) thick Fe/SiOC multilayers, and (b) a pure Fe film after 600 °C irradiation (dose of 8 × 1021 ion/m2). Statistical analysis of (c) void size and (d) void swelling in pure Fe films and Fe layers from thick Fe/SiOC multilayer composites as function of damage levels. Compared to pure Fe films, the swelling resistance in the Fe layers in thick Fe/SiOC multilayer composite is improved by 2.2 times and the averaged void size is reduced to half. Display Omitted - Highlights: • Radiation tolerance of amorphous SiOC and α-Fe nanocomposites at 600 °C are examined. • Compared to pure Fe films, thick Fe/SiOC multilayer composite exhibits smaller void size and more swelling resistance. • No voids are observed in the Fe component of the thin Fe/SiOC composites. • These results suggest that the Fe/SiOC interface promotes point defect recombination and suppresses void swelling.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jnucmat.2016.07.037Additional details
Identifiers
- DOI
- 10.1016/j.jnucmat.2016.07.037;
- PII
- S0022-3115(16)30433-0;
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 479
- Journal Page Range
- p. 411-417
- ISSN
- 0022-3115
- CODEN
- JNUMAM
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48092972
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ATOMIC DISPLACEMENTS; BREAKDOWN; COMPARATIVE EVALUATIONS; FILMS; HELIUM IONS; IMAGES; INTERFACES; IRRADIATION; KEV RANGE 100-1000; LAYERS; NANOCOMPOSITES; POINT DEFECTS; SILICON CARBIDES; SWELLING; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; VOIDS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEFORMATION; ELECTRON MICROSCOPY; ENERGY RANGE; EVALUATION; IONS; KEV RANGE; MATERIALS; MICROSCOPY; NANOMATERIALS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SILICON COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.