Published February 10, 2014 | Version v1
Journal article Metadata-only

Epitaxial growth of VO2 by periodic annealing

Creators

  • 1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States)
  • 2. Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon 305-353 (Korea, Republic of)
  • 3. Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  • 4. Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  • 5. Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  • 6. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
  • 7. Peter Grünberg Institute, PGI 9-IT, JARA-FIT, Research Centre Jülich, D-52425 Jülich (Germany)
  • 8. Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

Description

We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm

Additional details

Identifiers

DOI
10.1063/1.4864404;
arXiv
arXiv:1310.5021v4;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
6
Journal Page Range
p. 063104-063104.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45104571
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; CRYSTAL GROWTH; DEPOSITION; ELECTRIC CONDUCTIVITY; ENERGY-LOSS SPECTROSCOPY; INTERFACES; MOLECULAR BEAM EPITAXY; OXIDATION; PERIODICITY; SOLIDS; SUBSTRATES; THIN FILMS; TITANIUM; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM; VANADIUM OXIDES
Descriptors DEC
CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; EPITAXY; FILMS; HEAT TREATMENTS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SPECTROSCOPY; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; VANADIUM COMPOUNDS; VARIATIONS

Optional Information

Notes
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