Direct measurement of product of the electron mobility and mean free drift time of CdZnTe semiconductors using position sensitive single polarity charge sensing detectors

This article describes novel techniques to directly measure the electron mobility and mean free drift time product μeτe in semiconductor detectors. These methods are based on newly developed single polarity charge sensing and depth sensing techniques. Compared with conventional methods based on the Hecht relation, the new methods do not involve curve fitting, are less sensitive to the variation of pulse rise times, and allow the use of higher energy γ rays typical of many applications. copyright 1998 American Institute of Physics