Published 1985
| Version v1
Book
Characterization of W-N alloys formed by sputter deposition
Creators
- 1. California Institute of Technology, Pasadena, CA (USA)
Description
Thin films of W-N alloys have been prepared by reactive rf sputtering from a W target. Alloy compositions up to about 65at.%N can be achieved by this method. The structure and stability of these films have been studied using x-ray diffraction analysis. Between 18 and 38at.%N, amorphous phases are formed with crystallization temperatures up to above 6000C. All the films gradually release N upon vacuum annealing and decompose into αW between 700 and and 8000C in vacuo. Application of W-N alloys as diffusion barriers in a Si metallization scheme is discussed
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 0-632-01806-2
- Imprint Title
- Thin films: The relationship of structure to properties
- Journal Page Range
- p. 167-174.
Conference
- Title
- 2. spring meeting of the Materials Research Society.
- Dates
- 15-18 Apr 1985.
- Place
- San Francisco, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20015241
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALLOYS; AMORPHOUS STATE; ANNEALING; CRYSTALLIZATION; DIFFUSION; FABRICATION; FEASIBILITY STUDIES; HIGH TEMPERATURE; MICROSTRUCTURE; PHASE TRANSFORMATIONS; RF SYSTEMS; SILICON; SPUTTERING; STABILITY; THIN FILMS; TUNGSTEN NITRIDES; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; FILMS; HEAT TREATMENTS; NITRIDES; NITROGEN COMPOUNDS; SCATTERING; SEMIMETALS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS