Published February 1981 | Version v1
Journal article Metadata-only

The characteristics of current-voltage As20Ge20Te60 glass

Creators

  • 1. Kyungnam Industrial Junior Coll., Masan (Republic of Korea)

Description

The characteristics of current-voltage As20Ge20Te60 glass semiconductor were investigated in relation with the electrode distance and it has been confirmed that memory switching occurred every time. From the results, it has been found that threshold voltage for the switching from high-resistance state to low-resistance state was independent of the electrode distance (0.1mm-1.5mm) and had a constant value within the limits of experimental error. (author)

Additional details

Publishing Information

Journal Title
Theses Collect., Kyungnam Ind. Jr. Coll.
Journal Volume
5
Series
Theses Collect., Kyungnam Ind. Jr. Coll.
Journal Page Range
231-236

INIS

Country of Publication
Korea, Republic of
Country of Input or Organization
Korea, Republic of
INIS RN
12625858
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ARSENIC TELLURIDES; ELECTRIC CONDUCTIVITY; GERMANIUM COMPOUNDS; GLASS; SEMICONDUCTOR MATERIALS
Descriptors DEC
ARSENIC COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS