Multi-pixel p-i-n CdTe array fabricated by laser processing

We developed a production method of p- and n-type semiconductor. The method consists of a doping method using excimer laser processing and an element isolation method using abrasion. CdTe pin array was produced by this method. The high concentration doping such as 9 x 1018 cm-3 of n type and 5 x 1018 cm-3 of p type were observed by In dopant and Sb dopant, respectively. The excimer laser is 248 nm wave length, 20 ns pulse width and 420 mJ the maximum energy. The laser cleaning improved current-voltage characteristics of pin diode. Array device production method by a laser processing combined laser pattern doping and abrasion is explained. (Y.S.)