Characteristics of plate-like and color-zoning cubic boron nitride crystals
Creators
- 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)
- 2. College of Information and Technology, Jilin Agricultural University, 2888 Xincheng Street, Changchun 130118 (China)
- 3. College of Telecommunication Engineering, Jilin University, 5372 Nanhu Road, Changchun 130012 (China)
Description
The polarities of a kind of plate-like and color-zoning cubic boron nitride (cBN) crystal were extensively investigated by microscopy, chemical etching, XPS, Raman scattering, and current–voltage measurements. The {1 1 1}B faces and {1¯1¯1¯}N faces of the cBN samples can be easily distinguished by optical microscope as there are a lot of defects incorporate in {1¯1¯1¯}N sectors serving as the color centers, while the {1 1 1}B sectors have less defects and are nearly colorless. Both XPS and Raman spectra also revealed the uneven distributions of N vacancies and substitutional impurities in cBN crystals. The determination of {1 1 1}B faces and {1¯1¯1¯}N faces can also be verified by the results of the chemical etching because the {1¯1¯1¯}N faces have much faster etch rates than the {1 1 1}B faces. According to XPS, the {1 1 1}B faces have more C and O contaminations than the {1¯1¯1¯}N faces, however the {1¯1¯1¯}N faces have larger atomic ratio of B:N after surface cleaning by Ar+ sputtering. In the Raman spectra of the {1¯1¯1¯}N sectors of cBN, several small broad infrared-active phonon bands emerge nearby TO and LO modes because of the disorder-activated Raman scattering. As for the {1 1 1}B sectors, this phenomenon disappears. In addition, the {1 1 1}B faces have much smaller leakage current than the {1¯1¯1¯}N faces, which indicates that the {1 1 1}B sectors have higher crystalline quality.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2013.08.134Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2013.08.134;
- PII
- S0169-4332(13)01625-5;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 285
- Journal Issue
- Part B
- Journal Page Range
- p. 817-822
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46004854
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON IONS; BORON NITRIDES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTALS; CUBIC LATTICES; DISTRIBUTION; ETCHING; IMPURITIES; LEAKAGE CURRENT; OPTICAL MICROSCOPES; PHONONS; RAMAN EFFECT; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SPUTTERING; SURFACE CLEANING; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- BORON COMPOUNDS; CHARGED PARTICLES; CLEANING; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; ELECTRON SPECTROSCOPY; IONS; MATERIALS; MICROSCOPES; NITRIDES; NITROGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; POINT DEFECTS; QUASI PARTICLES; SPECTRA; SPECTROSCOPY; SURFACE FINISHING; VACANCIES
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.