Published August 2015 | Version v1
Journal article

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient

  • 1. Indian Institute of Technology Bombay, Mumbai (India)

Description

A novel current-mode voltage reference circuit which is capable of generating sub-1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature compensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to reduce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24 μA. A temperature coefficient of 9 ppm/°C is achieved over −25 to 125 °C temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × 110 μm2 (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/36/8/085001

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
36
Journal Issue
8
Journal Page Range
[11 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47089294
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPARATIVE EVALUATIONS; COUPLING; DESIGN; ELECTRIC POTENTIAL; SENSITIVITY; SIMULATION; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE
Descriptors DEC
EVALUATION; REACTIVITY COEFFICIENTS