An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient
Creators
- 1. Indian Institute of Technology Bombay, Mumbai (India)
Description
A novel current-mode voltage reference circuit which is capable of generating sub-1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature compensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to reduce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24 μA. A temperature coefficient of 9 ppm/°C is achieved over −25 to 125 °C temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × 110 μm2 (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/36/8/085001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 36
- Journal Issue
- 8
- Journal Page Range
- [11 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47089294
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; COUPLING; DESIGN; ELECTRIC POTENTIAL; SENSITIVITY; SIMULATION; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE
- Descriptors DEC
- EVALUATION; REACTIVITY COEFFICIENTS