Published January 27, 2014
| Version v1
Journal article
Si3N4 optomechanical crystals in the resolved-sideband regime
- 1. Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 (United States)
- 2. Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- 3. Maryland NanoCenter, University of Maryland, College Park, Maryland 20742 (United States)
Description
We demonstrate sideband-resolved Si3N4 optomechanical crystals supporting 105 quality factor optical modes at 980 nm, coupled to ≈4 GHz frequency mechanical modes with quality factors of ≈3000. Optomechanical electromagnetically induced transparency and absorption are observed at room temperature and in atmosphere with intracavity photon numbers in excess of 104
Additional details
Identifiers
- DOI
- 10.1063/1.4858975;
- arXiv
- arXiv:1311.6325v2;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 4
- Journal Page Range
- p. 041101-041101.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45101924
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; CRYSTALS; OPACITY; OPTICAL MODES; PHOTONS; QUALITY FACTOR; SILICON NITRIDES; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- BOSONS; DIMENSIONLESS NUMBERS; ELEMENTARY PARTICLES; MASSLESS PARTICLES; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; OSCILLATION MODES; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; SORPTION; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC