Modeling the anneal of radiation-induced trapped holes in a varying thermal environment

The anneal of radiation induced trapped holes in MOS transistors is found to be thermally activated. A quantitative, physical model based on thermal emission and tunneling is developed which accurately predicts the anneal of radiation-induced trapped holes in constant or time varying thermal environments. Data are presented which quantitatively verify the accuracy of the model for temperatures between 25 and 160 degrees C. The model results are demonstrated to be consistent with a large body of data in the literature. This model provides the basis for developing accurate quantitative screens for the rebound failure mechanism