Published October 2008 | Version v1
Journal article

Excitation of parasitic modes in gyrotrons with fast voltage rise

  • 1. Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742-3511 (United States)
  • 2. Science Application International Corporation, McLean, Virginia 22102 (United States)
  • 3. General Atomics, San Diego, California 92186-9784 (United States)
  • 4. Naval Research Laboratory, Washington, D.C. 20375 (United States)
  • 5. Centre de Recherches en Physique des Plasmas, Association EUROATOM, Ecole Polytechnique Federale, SB, Lausanne (Switzerland)

Description

Megawatt-class, long-pulse and continuous-wave gyrotrons operate in high-order modes in order to handle the thermal losses in the resonators. The spectral density of neighboring modes in these devices is high; consequently during the beam voltage rise parasitic modes can be excited. If such gyrotrons are used in plasma experiments, these parasites can be dangerous for the receiving channels of numerous diagnostic tools. It is shown that in gyrotrons utilizing diode-type magnetron injection guns the shortening of the voltage rise time to about one microsecond can practically eliminate excitation of parasitic modes even in devices with a 2 MW power level. Some means for realizing such rise times in high-voltage modulators which can be used for megawatt-class gyrotrons are discussed. It is also shown that allowable beam voltage overshoot in such gyrotrons is about 2.5%.

Additional details

Identifiers

Publishing Information

Journal Title
Physics of Plasmas
Journal Volume
15
Journal Issue
10
Journal Page Range
p. 103101-103101.5
ISSN
1070-664X
CODEN
PHPAEN

Optional Information

Notes
(c) 2008 American Institute of Physics