Published December 15, 1988
| Version v1
Journal article
Electron detection by means of silicon solid state imagers
Description
In this paper the principle of the detection of energetic electrons (5-50 keV) by means of silicon solid state imagers is discussed. A model is developed which allows to calculate the electron gain. This study reveals the necessity of a process modification in order to control the dead layer thickness. These principles are adopted in the design and fabrication of two CCDs for electron detection in specific applications. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research, Section A
- Journal Volume
- 273
- Journal Issue
- 2/3
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. A.
- Journal Page Range
- 636-639
- ISSN
- 0168-9002
- CODEN
- NIMAE
Conference
- Title
- London conference on position sensitive detectors.
- Dates
- 7-11 Sep 1987.
- Place
- London (UK).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 20023560
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE-COUPLED DEVICES; ELECTRON DETECTION; ENERGY DEPENDENCE; ENERGY LOSSES; KEV RANGE 01-10; KEV RANGE 10-100; POSITION SENSITIVE DETECTORS; RANGE; SI SEMICONDUCTOR DETECTORS; SILICON
- Descriptors DEC
- CHARGED PARTICLE DETECTION; DETECTION; ELEMENTS; ENERGY RANGE; KEV RANGE; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMIMETALS