Published May 1990 | Version v1
Journal article Metadata-only

Enrichment of InP crystal surface by indium as a result of selective material evaporation under pulsed laser irradiation

Creators

Description

Laser irradiation flux threshold density under which local melting-like changes on InP, GaAs and InAs crystals surface were established. Conclusion was made that changes are due to compounds decomposition under beam heating of surface to temperatures lower than compound melting point

Additional details

Additional titles

Original title (Russian)
Обогащение поверхности кристаллов InP индием вследствие селективного испарения материала при импульсной лазерной обработке

Publishing Information

Journal Title
Fizika i Khimiya Obrabotki Materialov
Journal Issue
no.3
Series
Fiz. Khim. Obrab. Mater.
ISSN
0015-3214
CODEN
FKOMA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
22042782
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRICAL PROPERTIES; INDIUM PHOSPHIDES; LASER RADIATION; PULSES; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES
Descriptors DEC
ELECTROMAGNETIC RADIATION; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS