Indium vacancy induced d0 ferromagnetism in Li-doped In2O3 nanoparticles
- 1. Department of Applied Physics, Institute of Advanced Materials Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin, 300072 (China)
Description
Highlights: • Effects of Li doping on the d0 ferromagnetism in In2O3. • The preferred occupation of Li varies from LiIn to Lii with the increasing dopant. • As the content of Li increases, ferromagnetism changes non-monotonically. • d0 ferromagnetism in Li-doped In2O3 is related with VIn due to Li-doping. Li-doped In2O3 nanoparticles with room temperature d0 ferromagnetism were prepared by a sol-gel method. X-ray diffraction, X-ray photoelectron spectroscopy and photoluminescence were carried out to investigate the effects of Li incorporation on the lattice defects. As the content of Li increases, non-monotonic changes in shifts of XRD peak (2 2 2) and the intensity ratios of indium vacancies related photoluminescence peak (PII) with respect to oxygen vacancies related peak (PI) are observed. Results show that at low doping level (≤2 at.%) Li prefers to occupy In sites, while with further doping the interstitial sites are more favorable for Li. Combined with the consistent non-monotonic change in saturation magnetization, we think that indium vacancies resulting from Li-doping play an important role in inducing d0 ferromagnetism in our Li-doped In2O3 nanoparticles, and the FM coupling is mainly mediated by the LiIn-ONN-VIn-ONN-LiIn chains.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jmmm.2017.11.077Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2017.11.077;
- PII
- S030488531731870X;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 451
- Journal Page Range
- p. 609-613
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53036640
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AUGMENTATION; DOPED MATERIALS; FERROMAGNETISM; INDIUM OXIDES; INTERSTITIALS; MAGNETIZATION; NANOPARTICLES; OCCUPATIONS; PEAKS; PHOTOLUMINESCENCE; SATURATION; SOL-GEL PROCESS; TEMPERATURE RANGE 0273-0400 K; VACANCIES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON SPECTROSCOPY; EMISSION; INDIUM COMPOUNDS; LUMINESCENCE; MAGNETISM; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PARTICLES; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; POINT DEFECTS; SCATTERING; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier B.V. All rights reserved.