Published May 22, 1989
| Version v1
Journal article
Sidewall damage in n+-GaAs quantum wires from reactive ion etching
- 1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Description
Electron cyclotron resonance and radio frequency reactive ion etching have been used to fabricate narrow n+-GaAs wires employing CCl2F2/He as the etch gas. A comparison of the induced sidewall damage is made using room-temperature conductivity measurements of the etched structures and the effect of overetching is investigated. In addition, preliminary analysis of low-temperature transport reveals that the amplitude of universal conductance fluctuations is extremely sensitive to sidewall damage
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 54
- Journal Issue
- 21
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 2130-2132
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20055782
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; CHARGED-PARTICLE TRANSPORT; ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON-RESONANCE; EPITAXY; ETCHING; FABRICATION; GALLIUM ARSENIDES; LOW TEMPERATURE; MOLECULAR BEAMS; PHYSICAL RADIATION EFFECTS; SILICON; WIRES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CYCLOTRON RESONANCE; ELECTRICAL PROPERTIES; ELEMENTS; GALLIUM COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATION TRANSPORT; RESONANCE; SEMIMETALS