Electron irradiation - induced defects in p-type silicon at 80 K

Using trancient capacitance spectroscopy we determined energy levels and studied the annealing behaviour of defect states introduced by 1.5 MeV electron irradiation of float-zone and pulled boron-doped silicon at 80 K. We found that apart from a previously reported bistable defect attributed to the boron substitutional-vacancy pair, the carbon interstitial in the float-zone silicon and the level E sub(t) + 0.34 eV in the pulled silicon exhibit charge-dependent peak amplitudes. Additionally, we found that in pulled silicon the defect level is not only due to the divacancies but also to another kind of contributor which shares it. Finally, some other levels are reported as well. (author)