Published January 1982 | Version v1
Journal article

32Si from 30Si(t,p)

  • 1. Physics Department, University of Pennsylvania, Philadelphia, Pennsylvania 19104

Description

In the 30Si(t,p) reaction at a bombarding energy of 15.0 MeV, excitation energies have been measured for 53 levels up to E/sub x/ = 11.5 MeV. Angular distributions for 29 levels below 8.8 MeV have been compared with distorted-wave Born-approximation calculations in order to make L (and hence J/sup π/) assignments. Measured cross sections are compared with absolute predictions with distorted-wave Born approximation calculations that use two-nucleon transfer amplitudes from a full sd- shell-basis shell-model calculation

Additional details

Publishing Information

Journal Title
Phys. Rev., C
Journal Volume
25
Journal Issue
1
Series
Phys. Rev., C.
Journal Page Range
5-12
ISSN
0556-2813