Published 2004
| Version v1
Journal article
Positron annihilation studies in amorphous silicon nitride
Creators
- 1. ICEMS, Dep. Fisica, Univ. Coimbra, Coimbra (Portugal)
- 2. Seccao Fisica UTAD., Quinta de Prados, Vila Real (Portugal)
- 3. C.F.M., Compl. Interdisciplinar I, IST/UTL, Lisboa (Portugal)
- 4. KFKI Res. Inst. Nucl. Part. Phys., Budapest (Hungary)
Description
Results of positron annihilation studies on amorphous silicon nitride thin films (a-SiNx:H) are presented. The chemical structure of the film, determined by FTIR measurements, is related to open type defects present. Samples with the lowest S parameter value exhibit the highest density and possess the best electrical performance. (orig.)
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 445-446
- Journal Page Range
- p. 90-92
- ISSN
- 0255-5476
- CODEN
- MSFOEP
Conference
- Title
- 13. International conference on positron annihilation - ICPA-13
- Dates
- Sep 2003
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 35050762
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ANNIHILATION; CRYSTAL DEFECTS; DOPED MATERIALS; FILMS; HYDROGEN ADDITIONS; POSITRON COLLISIONS; SILICON NITRIDES
- Descriptors DEC
- COLLISIONS; CRYSTAL STRUCTURE; INTERACTIONS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PARTICLE INTERACTIONS; PNICTIDES; SILICON COMPOUNDS