Published January 1988 | Version v1
Report

Silicon semiconductor beta-ray detector

  • 1. Tokyo Univ., Tanashi (Japan). Inst. for Nuclear Study

Description

It was the pending question to comparatively examine the characteristics of the beta-ray detectors used for the precise experiment on neutron life. However, sufficient study has not yet been made about the details of the experimental method, therefore, the following conditions were temporarily set. Only electrons are detected at the final state of neutron decay. The identification of electrons in the neutron decay reaction is carried out by distinguishing it as the event allowable in a phase space. For the purpose, as the performance required for the detectors, the range of energy measurement is 100 - 800 keV, and the energy resolution is not more than 50 keV. The space of the decay region that the detectors cover is not larger than the cross section 15 x 15 cm2 and the length 30 cm. A magnetic field is added. Under these conditions, the practically conceivable electron detectors are the following three types, that is gas amplification type chamber, plastic scintillation counter and silicon semiconductor detector. The silicon semiconductor detectors are practically usable as the detectors for this experiment, according to the investigation by the authors on the general matters, the material and the method of making the detectors. The plastic scintillation counters and the silicon semiconductor detectors are to be examined without making the final selection. (Kako, I.)

Additional details

Publishing Information

Imprint Title
Proceedings of the first workshop on the neutron lifetime
Imprint Pagination
69 p.
Journal Page Range
p. 57-65.
Report number
KEK--87-26

Conference

Title
1. workshop on the neutron lifetime.
Dates
19 Nov 1987.
Place
Oho, Ibaraki (Japan).