Influence of an electric field on the accumulation of the A and E centers in silicon

Operation of semiconductor equipment in the presence of defect-creating radiations and the difficulties encountered in explaining ionization annealing have made it necessary to study the influence of an electric field on the processes of radiation defect formation and the role played by the Coulomb interaction between the components of Frenkel pairs. Their purpose was to identify the differences between the processes of radiation defect formation in regions where the electric field was E = 104-105 V/cm, typical of the active parts of semiconductor devices, and in the neutral bulk of the semiconductor