Published 1989
| Version v1
Book
The outdiffusion of boron and arsenic from pre-formed ion-beam-mixed cobalt disilicide layers using rapid thermal processing
Description
Arsenic out-diffusing from cobalt disilicide into underlying silicon displays an enhanced activation level of up to 80%, and an enhanced diffusivity of greater than one order of magnitude. Boron, in contrast, displays a diffusivity as small as 0.25 times that expected. These observations are consistent with a considerable Si- vacancy injection by the silicide layer into the underlying substrate
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 1-55899-019-4
- Imprint Title
- Rapid thermal annealing/chemical vapor deposition and integrated processing
- Imprint Pagination
- 494 p.
- Series
- Materials Research Society symposium proceedings. Volume 146.
- Journal Page Range
- p. 261-266.
Conference
- Title
- Spring meeting of the Materials Research Society.
- Dates
- 24-28 Apr 1989.
- Place
- San Diego, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21078497
- Subject category
- S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; ARSENIC; ATOM TRANSPORT; BORON; COBALT SILICIDES; DIFFUSION; ION BEAMS; SILICON
- Descriptors DEC
- BEAMS; COBALT COMPOUNDS; ELEMENTS; ENERGY; HEAT TREATMENTS; NEUTRAL-PARTICLE TRANSPORT; RADIATION TRANSPORT; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-890426--.