Study of low energy hydrogen ion implantation effects in silicon: electric properties

Several analysis methods have been developed: hydrogen distribution analysis by nuclear reaction, crystal disorder evaluation by R.B.S., chemical impurities identification by SIMS, optical measurements, electrical characterization of surface barriers, deep level spectroscopy DLTS, ... All these analyses have been made after implantation then after thermal annealing. A model explaining the effect of implantation then after thermal annealing. A model explaining the effect of implanted hydrogen is proposed, the implantation creates an important quantity of defects in a thin layer near the surface; a chemical attack removes them. In Schottky devices, this layer has a basic role on carrier transport phenomena. Other results are given, some of them allow to give an account of the passivation by hydrogen implantation