A CMOS analog front-end chip for amperometric electrochemical sensors
Creators
- 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
- 2. College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001 (China)
Description
This paper reports a complimentary metal–oxide–semiconductor (CMOS) analog front-end chip for amperometric electrochemical sensors. The chip includes a digital configuration circuit, which can communicate with an external microcontroller by employing an I2C interface bus, and thus is highly programmable. Digital correlative double samples technique and an incremental sigma–delta analog to digital converter (Σ–Δ ADC) are employed to achieve a new proposed system architecture with double samples. The chip has been fabricated in a standard 0.18-μm CMOS process with high-precision and high-linearity performance occupying an area of 1.3 × 1.9 mm2. Sample solutions with various phosphate concentrations have been detected with a step concentration of 0.01 mg/L. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/36/7/075004Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 36
- Journal Issue
- 7
- Journal Page Range
- [6 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47089343
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMPEROMETRY; ANALOG-TO-DIGITAL CONVERTERS; ELECTROCHEMISTRY; PHOSPHATES; SENSORS
- Descriptors DEC
- CHEMICAL ANALYSIS; CHEMISTRY; ELECTRONIC EQUIPMENT; EQUIPMENT; OXYGEN COMPOUNDS; PHOSPHORUS COMPOUNDS; QUANTITATIVE CHEMICAL ANALYSIS; TITRATION; VOLUMETRIC ANALYSIS