Published 1983 | Version v1
Report Restricted

Radiation-hardened 16K-bit MNOS EAROM

Creators

Description

A radiation-hardened silicon-gate CMOS/NMNOS 16K-bit EAROM has been designed, fabricated, and evaluated. This memory has been designed to be used as a ROM replacement in radiation-hardened microprocessor-based systems

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01 as DE83015101.

Files

Restricted

The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
12 p.
Report number
SAND--83-0696C

Conference

Title
20. IEEE annual conference on nuclear and space radiation effects.
Dates
18-21 Jul 1983.
Place
Gatlinburg, TN (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
14803021
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
FABRICATION; OPERATION; RADIATION HARDENING; SEMICONDUCTOR STORAGE DEVICES; SPECIFICATIONS
Descriptors DEC
HARDENING; MEMORY DEVICES; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES

Optional Information

Secondary number(s)
CONF-830714--8.