Published August 15, 2007
| Version v1
Journal article
Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy
Creators
- 1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan)
- 2. PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)
Description
Ga- or In-doped BaSi2 films were grown on Si(111) by molecular beam epitaxy (MBE). The Ga-doped BaSi2 showed n-type conductivity. The electron concentration and resistivity of the Ga-doped BaSi2 depended on the Ga temperature; however, the electron concentration and resistivity could not be controlled properly. In contrast, the In-doped BaSi2 showed p-type conductivity and its hole concentration was controlled in the range between 1016 and 1017 cm-3 at RT
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2007.02.050Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2007.02.050;
- PII
- S0040-6090(07)00206-4;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 515
- Journal Issue
- 22
- Journal Page Range
- p. 8242-8245
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- Asia-Pacific conference on semiconducting silicides science and technology towards sustainable optoelectronics
- Acronym
- APAC-SILICIDE 2006
- Dates
- 29-31 Jul 2006
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39069181
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BARIUM COMPOUNDS; DOPED MATERIALS; FILMS; HOLES; IMPURITIES; MOLECULAR BEAM EPITAXY; SILICIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CRYSTAL GROWTH METHODS; EPITAXY; MATERIALS; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.